aptgf25h120t3g aptgf25h120t3g ? rev 2 march, 2009 www.microsemi.com 1-6 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 40 i c continuous collector current t c = 80c 25 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 208 w rbsoa reverse bias safe operating area t j = 125c 50a@1150v these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com q3 11 10 q1 cr1 7 22 13 14 cr3 3 30 29 32 18 19 23 8 15 31 r1 16 4 cr4 cr2 q2 q4 26 27 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? v ces = 1200v i c = 25a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? non punch through (npt) fast igbt ? - low voltage drop - low tail current - switching frequency up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated - symmetrical design ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor fo r temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant full - bridge n pt igbt power module
aptgf25h120t3g aptgf25h120t3g ? rev 2 march, 2009 www.microsemi.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 500 a t j = 25c 2.5 3.2 3.7 v ce(sat) collector emitter saturation voltage v ge =15v i c = 25a t j = 125c 4.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 4 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 1650 c oes output capacitance 250 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 110 pf q g total gate charge 160 q ge gate ? emitter charge 10 q gc gate ? collector charge v ge = 15v v bus = 600v i c =25a 70 nc t d(on) turn-on delay time 60 t r rise time 50 t d(off) turn-off delay time 305 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 25a r g = 22 30 ns t d(on) turn-on delay time 60 t r rise time 50 t d(off) turn-off delay time 346 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 25a r g = 22 40 ns e on turn-on switching energy t j = 125c 3.5 e off turn-off switching energy v ge = 15v v bus = 600v i c = 25a r g = 22 t j = 125c 1.5 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 100 i rm maximum reverse leakage current v r =1200v t j = 125c 250 a i f forward current tc = 80c 25 a t j = 25c 2.1 v f diode forward voltage i f = 25a v ge = 0v t j = 125c 1.9 v t j = 25c 95 t rr reverse recovery time t j = 125c 190 ns t j = 25c 2.1 q rr reverse recovery charge t j = 125c 4.5 c t j = 25c 0.75 e r reverse recovery energy i f = 25a v r = 600v di/dt =1000a/s t j = 125c 1.5 mj
aptgf25h120t3g aptgf25h120t3g ? rev 2 march, 2009 www.microsemi.com 3-6 temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.6 r thjc junction to case thermal resistance diode 1.2 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
aptgf25h120t3g aptgf25h120t3g ? rev 2 march, 2009 www.microsemi.com 4-6 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 10 20 30 40 50 60 70 80 012345678 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle output characteristics (v ge =10v) t j =25c t j =125c 0 4 8 12 16 20 00.511.522.533.5 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =25c t j =125c 0 20 40 60 80 100 120 0 2.5 5 7.5 10 12.5 15 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle gate charge v ce =240v v ce =600v v ce =960v 0 2 4 6 8 10 12 14 16 18 0 30 60 90 120 150 180 gate charge (nc) v ge , gate to emitter voltage (v) i c = 25a t j = 25c ic=50a ic=25a ic=12.5a 0 1 2 3 4 5 6 7 8 9 9 10111213141516 v ge , gate to emitter voltage (v) on state voltage vs gate to emitter volt. v ce , collector to emitter voltage (v) t j = 125c 250s pulse test < 0.5% duty cycle ic=50a ic=25a ic=12.5a 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature
aptgf25h120t3g aptgf25h120t3g ? rev 2 march, 2009 www.microsemi.com 5-6 v ge = 15v 50 55 60 65 70 75 5 1525354555 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current v ce = 600v r g = 22 ? v ge =15v, t j =25c v ge =15v, t j =125c 200 250 300 350 400 5 1525354555 i ce , collector to emitter current (a) turn-off delay time vs collector current td(off), turn-off delay time (ns ) v ce = 600v r g = 22 ? v ge =15v 0 40 80 120 160 5 1525354555 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 600v r g = 22 ? t j = 25c t j = 125c 20 25 30 35 40 45 50 5 1525354555 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 600v, v ge = 15v, r g = 22 ? t j =25c, v ge =15v t j =125c, v ge =15v 0 2 4 6 8 10 5 1525354555 i ce , collector to emitter current (a) turn-on energy loss vs collector current eon, turn-on energy loss (mj ) v ce = 600v r g = 22 ? t j = 25c t j = 125c 0 1 2 3 4 5 1525354555 i ce , collector to emitter current (a) eoff, turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 600v v ge = 15v r g = 22 ? eon, 25a eoff, 25a 0 1 2 3 4 5 0 102030405060 gate resistance (ohms) switching energy losses (mj) switching energy losses vs gate resistance v ce = 600v v ge = 15v t j = 125c 0 10 20 30 40 50 60 0 400 800 1200 i c , collector current (a) reverse bias safe operating area v ce , collector to emitter voltage (v)
aptgf25h120t3g aptgf25h120t3g ? rev 2 march, 2009 www.microsemi.com 6-6 cies cres coes 10 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration hard switching zcs zvs 0 20 40 60 80 100 120 0 10203040 i c , collector current (a) operating frequency vs collector current fmax, operating frequency (khz ) v ce = 600v d = 50% r g = 22 ? t j = 125c t c = 75c microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s pate nts 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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